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| SEMiX302GB066HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE 15 V Tj = 150 C VCES 600 V VGES tpsc Tj = 175 C Tc = 25 C Tc = 80 C 600 379 286 300 600 -20 ... 20 6 -40 ... 175 Tc = 25 C Tc = 80 C 419 307 300 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 600 1400 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R)2s Trench IGBT Modules SEMiX302GB066HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Tj = 175 C Typical Applications * Matrix Converter * Resonant Inverter * Current Source Inverter Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 300 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 18.5 1.15 0.55 2400 1.00 110 85 11.5 820 70 15 0.16 1.45 1.70 0.9 0.85 1.8 2.8 5.8 0.15 1.9 2.1 1 0.9 3.0 4.0 6.5 0.45 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * For short circuit: Soft RGoff recommended * Take care of over-voltage caused by stray inductance Conditions min. typ. max. Unit VGE=VCE, IC = 4.8 mA VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 300 V IC = 300 A Tj = 150 C RG on = 5.1 RG off = 5.1 GB (c) by SEMIKRON Rev. 11 - 02.12.2008 1 SEMiX302GB066HDs Characteristics Symbol Conditions Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C rF Tj = 25 C Tj = 150 C IF = 300 A Tj = 150 C di/dtoff = 3600 A/s T = 150 C j VGE = -8 V Tj = 150 C VCC = 300 V per diode 0.9 0.75 1.0 1.5 min. typ. 1.4 1.4 1 0.85 1.3 1.8 240 35 7.5 max. 1.6 1.6 1.1 0.95 1.7 2.2 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chiplevel VF0 SEMiX(R)2s Trench IGBT Modules SEMiX302GB066HDs IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.19 18 K/W nH m m K/W Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 res., terminal-chip per module to heat sink (M5) to terminals (M6) TC = 25 C TC = 125 C 3 2.5 0.7 1 0.045 5 5 250 0,493 5% 3550 2% Nm Nm g Typical Applications * Matrix Converter * Resonant Inverter * Current Source Inverter Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; k K Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * For short circuit: Soft RGoff recommended * Take care of over-voltage caused by stray inductance GB 2 Rev. 11 - 02.12.2008 (c) by SEMIKRON SEMiX302GB066HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 11 - 02.12.2008 3 SEMiX302GB066HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 11 - 02.12.2008 (c) by SEMIKRON SEMiX302GB066HDs SEMiX 2s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 11 - 02.12.2008 5 |
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